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BFP405F |
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| Part Number | BFP405F |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | Low Noise Silicon Bipolar RF Transistor • For low current applications • Minimum noise figure NFmin = 1.25 dB at 1.8 GHz Outstanding Gms = 22.5 dB at 1.8 GHz • Transition frequency fT = 25 GHz • Pb-fr... |
| Features |
r Junction - soldering point1)
Symbol RthJS
Value
4.5 4.1 15 15 1.5 25 3 75
150 -55 ... 150
Value 500
Unit V
mA mW °C
Unit K/W
1 2013-09-19
BFP405F
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 5 mA, VCE = 4 V, pulse measured
V(BR)CEO 4 5 - V
ICES
- - 10 µA
ICBO
- - 100 n... |
| Document |
 BFP405F Data Sheet
PDF 526.01KB |
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