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Infineon |
IGBT • AlSiC Base Plate for increased Thermal Cycling Capability ModuleLabelCode BarcodeCode128 DMX-Code preparedby:SB approvedby:DTS ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(Production |
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Infineon |
IGBT ateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz |
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Infineon |
IGBT , Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V, VCE = 1800V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetra |
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Infineon |
IGBT • ExtendedoperatingtemperatureTvjop • LowVCEsat MechanicalFeatures • 4kVAC1mininsulation • AlSiC base plate for increased thermal cycling capability • PackagewithCTI>400 • Highcreepageandclearancedistances • Highpowerandthermalc |
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Infineon |
IGBT • HighDCstability • Highdynamicrobustness • Highshort-circuitcapability • LowVCEsat • TrenchIGBT3 • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • AlSiC base plate for increased thermal cycling capability • Packagewith |
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Desde 2024. D4U Semiconductor.
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