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FD800R17KE3_B2 |
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| Part Number | FD800R17KE3_B2 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD800R17KE3_B2 IGBT,Brems-Chopper/IGBT,Brake-Chopper HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Spe... |
| Features |
ateladung Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand Internalgateresistor
Tvj = 25°C
Eingangskapazität Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload
IC = 800 A, VCE = 900 V VGE = ±15 V RGon = 1,8 ... |
| Document |
 FD800R17KE3_B2 Data Sheet
PDF 502.83KB |
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Desde 2024. D4U Semiconductor.
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