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Infineon |
IGBT-modules • HighDCstability • Highshort-circuitcapability • Lowswitchinglosses • LowVCEsat • Tvjop=150°C • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • AlSiC base plate for increased thermal cycling capability • PackagewithCT |
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Infineon |
IGBT • ExtendedOperationTemperatureTvjop • LowSwitchingLosses • LowVCEsat • Tvjop=150°C • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • IsolatedBasePlate • StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code p |
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Infineon |
IGBT • ExtendedOperationTemperatureTvjop • HighDCStability • High Short Circuit Capability, Self Limiting Short CircuitCurrent • VCEsatwithpositiveTemperatureCoefficient • LowVCEsat MechanicalFeatures • 4kVAC1minInsulation • Packagewith |
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Infineon |
IGBT Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MH |
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Infineon |
IGBT • ExtendedoperatingtemperatureTvjop • LowVCEsat MechanicalFeatures • 4kVAC1mininsulation • AlSiC base plate for increased thermal cycling capability • PackagewithCTI>400 • Highcreepageandclearancedistances • Highpowerandthermalc |
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Infineon |
IGBT • ExtendedOperationTemperatureTvjop • HighDCStability • HighCurrentDensity • LowSwitchingLosses • LowVCEsat • Tvjop=150°C • EnlargedDiodeforregenerativeoperation MechanischeEigenschaften • GehäusemitCTI>400 • GroßeLuft-undK |
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Infineon |
IGBT • ExtendedOperationTemperatureTvjop • HighDCStability • HighCurrentDensity • LowSwitchingLosses • Tvjop=150°C • LowVCEsat MechanicalFeatures • PackagewithCTI>400 • HighCreepageandClearanceDistances • HighPowerandThermalCycl |
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Infineon |
IGBT • HighDCstability • Highshort-circuitcapability • LowVCEsat • Unbeatablerobustness • Tvjop=150°C • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • AlSiC base plate for increased thermal cycling capability • PackagewithC |
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Desde 2024. D4U Semiconductor.
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