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FD1000R17IE4D_B2 |
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| Part Number | FD1000R17IE4D_B2 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD1000R17IE4D_B2 PrimePACK™3ModulundNTC PrimePACK™3moduleandNTC VorläufigeDaten/PreliminaryData TypischeAnwendung... |
| Features |
• ExtendedOperationTemperatureTvjop • HighDCStability • HighCurrentDensity • LowSwitchingLosses • LowVCEsat • Tvjop=150°C • EnlargedDiodeforregenerativeoperation MechanischeEigenschaften • GehäusemitCTI>400 • GroßeLuft-undKriechstrecken • HoheLast-undthermischeWechselfestigkeit • HoheLeistungsdichte •MKoudpufelreboLdaenbpelaltCteode BarcodeCode128 DMX-Code MechanicalFeatures • PackagewithCTI>400 • HighCreepageandClearanceDistances • HighPowerandThermalCyclingCapability • HighPowerDensity • CopperBasePlate ContentoftheCode ModuleSeri... |
| Document |
 FD1000R17IE4D_B2 Data Sheet
PDF 683.74KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FD1000R17IE4 |
Infineon |
IGBT |
|
| 2 | FD1000R33HE3-K |
Infineon |
IGBT-modules |
|
| 3 | FD1000R33HL3-K |
Infineon |
IGBT |
|
| 4 | FD1000A |
Finechips |
4-COM 51-SEG LCD Display Driver |
|
| 5 | FD1000FH-56 |
Mitsubishi Electric Semiconductor |
Diode |
|
| 6 | FD1000FV-90 |
Mitsubishi Electric Semiconductor |
Diode |
|
Desde 2024. D4U Semiconductor.
|