Infineon BCX Hoja de datos

No.	parte #	Fabricante	Descripción
1	BCX70K	Infineon Technologies AG	NPN Silicon AF Transistors l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Colle
2	BCX54	Infineon Technologies AG	NPN Silicon AF Transistors point1) RthJS ≤ 15 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit - V A mA W °C Unit K/W 2 2011-09-19 BCX54 ...- BCX56... Electrical Characteristics at TA = 25°C, unless otherwise specifi
3	BCX55	Infineon Technologies AG	NPN Silicon AF Transistors point1) RthJS ≤ 15 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit - V A mA W °C Unit K/W 2 2011-09-19 BCX54 ...- BCX56... Electrical Characteristics at TA = 25°C, unless otherwise specifi
4	BCX41	Infineon	NPN Silicon AF and Switching Transistor ter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 125 - - IC = 10 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 125 - - IC = 100 µA, IE = 0 Emitter-base breakdown voltage V(BR)EBO
5	BCX42	Infineon Technologies AG	PNP Silicon AF an Swiching Transistors ector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 VCB = 100 V, IE = 0 Collector cutoff current VCB = 8
6	BCX51	Infineon Technologies AG	PNP Silicon AF Transistors lue Junction - soldering point1) RthJS ≤ 15 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V A mA W °C Unit K/W 2 2011-07-29 BCX51...-BCX53... Electrical Characteristics at TA = 25°C, un
7	BCX52	Infineon Technologies AG	PNP Silicon AF Transistors lue Junction - soldering point1) RthJS ≤ 15 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V A mA W °C Unit K/W 2 2011-07-29 BCX51...-BCX53... Electrical Characteristics at TA = 25°C, un
8	BCX53	Infineon Technologies AG	PNP Silicon AF Transistors lue Junction - soldering point1) RthJS ≤ 15 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V A mA W °C Unit K/W 2 2011-07-29 BCX51...-BCX53... Electrical Characteristics at TA = 25°C, un
9	BCX71K	Infineon	PNP Silicon AF Transistors
10	BCX56	Infineon Technologies AG	NPN Silicon AF Transistors point1) RthJS ≤ 15 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit - V A mA W °C Unit K/W 2 2011-09-19 BCX54 ...- BCX56... Electrical Characteristics at TA = 25°C, unless otherwise specifi
11	BCX69	Infineon Technologies AG	PNP Silicon AF Transistors
12	BCX71H	Infineon	PNP Silicon AF Transistors
13	BCX68	Infineon Technologies AG	NPN Silicon AF Transistors Characteristics Collector-emitter breakdown voltage IC = 30 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 1 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25
14	BCX70	Infineon Technologies AG	NPN Silicon AF Transistors l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Colle
15	BCX70G	Infineon Technologies AG	NPN Silicon AF Transistors l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Colle
16	BCX70H	Infineon Technologies AG	NPN Silicon AF Transistors l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Colle
17	BCX70J	Infineon Technologies AG	NPN Silicon AF Transistors l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Colle
18	BCX71G	Infineon	PNP Silicon AF Transistors
19	BCX71J	Infineon	PNP Silicon AF Transistors