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Infineon |
Silicon Tuning Diode z VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz CT pF 5.05 5.4 5.75 3.4 4.2 5.2 2.7 3.5 4.6 2.5 3.1 3.7 Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Capacitance difference VR = 1 V, VR = 3 V, f = 1 MHZ Capacitance difference VR = 3 V, VR = 4 V, f = 1 |
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Infineon Technologies AG |
Silicon Tuning Diodes f = 1 MHz Series resistance VR = 5 V, f = 470 MHz rS 0.15 0.4 CT2 /CT10 CT 17.5 14 11.6 10 5.5 2 18.6 15 12.6 11 6 2.5 19.6 16 13.6 12 6.5 3 pF Unit max. nA typ. IR 3 100 2 Nov-14-2002 BBY55... Diode capacitance CT = (VR ) f = 1MHz Capac |
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Infineon Technologies AG |
Silicon Tuning Diode typ. max. DC Characteristics Reverse current VR = 8 V VR = 8 V, TA = 85 °C IR nA - - 10 - - 100 AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz CT pF 16.5 17.5 18.6 - 9.35 - |
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Infineon |
Silicon Tuning Diode z VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz CT pF 5.05 5.4 5.75 3.4 4.2 5.2 2.7 3.5 4.6 2.5 3.1 3.7 Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Capacitance difference VR = 1 V, VR = 3 V, f = 1 MHZ Capacitance difference VR = 3 V, VR = 4 V, f = 1 |
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Infineon |
Silicon Tuning Diode - 200 AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz CT CT1/CT3 4.8 5.3 5.8 1.85 2.4 3.1 1.8 2.2 2.6 rS - 0.47 - Unit nA pF Ω 2 |
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Infineon |
Silicon Tuning Diode typ. max. DC Characteristics Reverse current VR = 8 V VR = 8 V, TA = 85 °C IR nA - - 10 - - 100 AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz CT pF 16.5 17.5 18.6 - 9.35 - |
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Infineon Technologies AG |
Silicon Tuning Diode z VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz CT pF 5.05 5.4 5.75 3.4 4.2 5.2 2.7 3.5 4.6 2.5 3.1 3.7 Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Capacitance difference VR = 1 V, VR = 3 V, f = 1 MHZ Capacitance difference VR = 3 V, VR = 4 V, f = 1 |
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Infineon Technologies AG |
Silicon Tuning Diodes 4 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz CT1/CT4 rS 1.1 1.6 2.1 - 0.9 1.7 Unit nA pF Ω 2 2011-06-14 BBY52... CT IR Diode capacitance CT = ƒ (VR) f = 1MHz 2.6 pF 2.4 2.3 2.2 2.1 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 10 0.4 0.8 1.2 |
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Infineon Technologies AG |
Silicon Tuning Diode - 200 AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz CT CT1/CT3 4.8 5.3 5.8 1.85 2.4 3.1 1.8 2.2 2.6 rS - 0.47 - Unit nA pF Ω 2 |
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Infineon Technologies AG |
Silicon Tuning Diode 53 3.3 0.25 Ω CT 37 22 14.8 40 15.8 12.1 43 25 16.8 pF Unit max. nA typ. IR 5 100 2 Jan-13-2004 BBY56... Diode capacitance CT = ƒ (VR) f = 1MHz 100 pF Temperature coefficient of the diode capacitance TCc = ƒ (VR) f = 1 MHz 0.0012 1/K 80 70 0 |
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Infineon Technologies AG |
Silicon Tuning Diodes trical Characteristics at T A = 25°C, unless otherwise specified Parameter DC Characteristics Reverse current VR = 8 V VR = 8 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = |
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Infineon Technologies AG |
Silicon Tuning Diode t max. nA typ. IR 20 100 2 Jul-18-2002 BBY59... Diode capacitance CT = (VR ) f = 1MHz Temperature coefficient of the diode capacitance TCC = (VR ) 0.00095 1/°C 0.00085 0.0008 0.00075 60 pF 50 45 CT 40 35 30 25 20 15 10 5 0 0.5 1 1.5 |
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Infineon Technologies AG |
Silicon Tuning Diode V, f = 1 MHz CT 28.2 29.5 30.8 - 20.25 - 9.8 - 4.45 2.6 2.7 2.8 Capacitance ratio VR = 0.3 V, VR = 4.7 V Capacitance ratio VR = 1 V, VR = 3 V Series resistance VR = 1 V, f = 470 MHz CT0.3/ CT4.7 CT1/CT3 rS 10 10.9 - 4.55 - 0.6 0.9 Unit nA pF pF |
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Infineon Technologies AG |
Silicon Tuning Diodes C Characteristics Reverse current VR = 10 V VR = 10 V, TA = 65 °C IR nA - - 20 - - 200 AC Characteristics Diode capacitance1) VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4.5 V, f = 1 MHz CT pF 66 68.7 71.5 33 35.4 38 19.7 20. |
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Infineon |
Silicon Tuning Diode z VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz CT pF 5.05 5.4 5.75 3.4 4.2 5.2 2.7 3.5 4.6 2.5 3.1 3.7 Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Capacitance difference VR = 1 V, VR = 3 V, f = 1 MHZ Capacitance difference VR = 3 V, VR = 4 V, f = 1 |
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Infineon |
Silicon Tuning Diode z VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz CT pF 5.05 5.4 5.75 3.4 4.2 5.2 2.7 3.5 4.6 2.5 3.1 3.7 Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Capacitance difference VR = 1 V, VR = 3 V, f = 1 MHZ Capacitance difference VR = 3 V, VR = 4 V, f = 1 |
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Infineon |
Silicon Tuning Diodes 4 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz CT1/CT4 rS 1.1 1.6 2.1 - 0.9 1.7 Unit nA pF Ω 2 2011-06-14 BBY52... CT IR Diode capacitance CT = ƒ (VR) f = 1MHz 2.6 pF 2.4 2.3 2.2 2.1 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 10 0.4 0.8 1.2 |
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Infineon |
Silicon Tuning Diodes 4 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz CT1/CT4 rS 1.1 1.6 2.1 - 0.9 1.7 Unit nA pF Ω 2 2011-06-14 BBY52... CT IR Diode capacitance CT = ƒ (VR) f = 1MHz 2.6 pF 2.4 2.3 2.2 2.1 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 10 0.4 0.8 1.2 |
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Infineon |
Silicon Tuning Diode - 200 AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz CT CT1/CT3 4.8 5.3 5.8 1.85 2.4 3.1 1.8 2.2 2.6 rS - 0.47 - Unit nA pF Ω 2 |
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Infineon |
Silicon Tuning Diode - 200 AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz CT CT1/CT3 4.8 5.3 5.8 1.85 2.4 3.1 1.8 2.2 2.6 rS - 0.47 - Unit nA pF Ω 2 |
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Desde 2024. D4U Semiconductor.
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