BBY51 |
Part Number | BBY51 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
Description | Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment • Pb-free (RoHS compliant) package BBY51... BBY51-02... |
Features |
z VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz
CT pF 5.05 5.4 5.75 3.4 4.2 5.2 2.7 3.5 4.6 2.5 3.1 3.7
Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Capacitance difference VR = 1 V, VR = 3 V, f = 1 MHZ Capacitance difference VR = 3 V, VR = 4 V, f = 1 MHZ
CT1/CT4 1.55 1.75 2.2 C1V-C3V 1.4 1.78 2.2 pF C3V-C4V 0.3 0.5 0.7
Series resistance VR = 1 V, f = 1 GHz
rS - 0.37 - Ω
2 2014-02-11
BBY51...
Diode capacitance CT = ƒ (VR) f = 1MHz
10 C T pF
8
EHD07128
Temperature coefficient of the diode capacitance TCc = ƒ (VR)
10 -3
1/°C
TCc
6
10 -4
4
2
0 0
2
4V6
10 -5 1 2 3 4 5 6V 8
VR VR
3 ... |
Document |
BBY51 Data Sheet
PDF 0.96MB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BBY51 |
Siemens Group |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) | |
2 | BBY51-02L |
Infineon |
Silicon Tuning Diode | |
3 | BBY51-02V |
Infineon |
Silicon Tuning Diode | |
4 | BBY51-02W |
Infineon |
Silicon Tuning Diode | |
5 | BBY51-03W |
Infineon |
Silicon Tuning Diode | |
6 | BBY52 |
Siemens Group |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |