| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Infineon Technologies |
IHW15N120R • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop ® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable b |
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Infineon |
MOSFET •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation Fullyqualifiedaccordingto |
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Infineon Technologies |
Fast IGBT wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C 2 C E PG-TO-247-3 VCE 1200V IC 25A Eoff 2.9mJ Tj 150°C Marking K25N120 Package PG-TO-247-3 Symbol VCE IC Value 1200 46 25 Unit V A ICpuls IF 84 84 42 25 |
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Infineon Technologies |
IGBT |
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Infineon Technologies |
IGBT •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparall |
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Infineon Technologies |
IGBT C TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •comp |
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Infineon Technologies |
Reverse conducting IGBT "& 2 T &3 "93"& 3 6#2 99 13T ?"9 9 &"=" 7 122 &31 122 &31 4"33 4"33 8 !71?# 123 $ V[\X ] E E 4+ + . ,. @ . + . . E E O, B+ . E + * #1# #+ K ` . 9 36 3"1# 123 $ E 5"17 =1 ? 7 123 $ / 3 4"33 3T 9T127 123 $ 123 $ &122 &31 &6 2 ! $ &6 9"93 |
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Infineon |
IGBT TRENCHSTOPTMtechnologyoffering •verylowturn-offenergy •lowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating,halogen-freemouldcompound,RoHS compliant •comp |
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Infineon |
IGBT 150°C) TC = 25C TC = 110C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 175C Diode forward current (Tj = 150°C) TC = 25C TC = 110C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Shor |
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Infineon |
IGBT •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparall |
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Infineon |
Reverse Conducting IGBT • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavio |
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Infineon |
IGBT • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavio |
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Infineon |
IGBT C TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •comp |
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Infineon |
IGBT TRENCHSTOPTMtechnologyoffering •bestinclassswitchingperformance:lessthan500µJtotal switchinglossesachievable •verylowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-fr |
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Infineon |
IKW15N120H3 IGBT C TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •comp |
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Infineon |
MOSFET er Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on |
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Infineon |
IGBT HighspeedH3technologyoffers: •Ultra-lowlossswitchinglossesthankstoKelvinemitterpin packageincombinationwithHighspeedH3technology •Highefficiencyinhardswitchingandresonanttopologies •10µsecshortcircuitwithstandtimeat |
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Infineon |
MOSFET •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh |
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Infineon |
Power Transistor • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr |
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Infineon |
MOSFET • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020 Product valida |
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Desde 2024. D4U Semiconductor.
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