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Infineon Technologies |
IGBT andBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowQg •IGBTcopackedwithRAPID1fastan |
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Infineon |
High Speed IGBT e-emitter voltage static transient (tp<1µs, D<0.05) Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) |
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Infineon Technologies |
IGBT andBenefits: C HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQg •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature |
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Infineon |
IGBT andBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithfull- |
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Infineon Technologies |
IGBT Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very |
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Infineon Technologies |
IGBT andBenefits: HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowQG •Maximumjunctiontemperature175°C •Qua |
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Infineon |
IGBT andBenefits: C HighspeedS5technologyoffering •Highspeedsmoothswitchingdeviceforhard&softswitching •VeryLowVCEsat,1.35Vatnominalcurrent •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •Lowgat |
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Infineon |
IGBT andBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID |
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Infineon |
Reverse conducting IGBT •PowerfulmonolithicdiodeoptimizedforZCSapplications •TRENCHSTOPTM5technologyapplicationsoffers: -highruggedness,temperaturestablebehavior -verylowVCEsatandlowEoff -easyparallelswitchingcapabilityduetopositive temperatur |
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Infineon |
IGBT • VCE = 650 V • IC = 50 A • Very low VCE,sat • Low turn-off losses • Short tail current • Reduced EMI • Very soft, fast recovery antiparallel diode • Maximum junction temperature Tvjmax = 175°C • Qualified according to JEDEC for target applications • |
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Infineon |
IGBT Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners TRENCHSTOP™ technology for 600V applications offers : |
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Infineon |
IGBT TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowturn-offlosses •shorttailcurrent •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-f |
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Infineon Technologies |
IGBT TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •complete |
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Infineon Technologies |
IGBT TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •complete |
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Infineon Technologies |
IGBT andBenefits: C HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctionte |
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Infineon |
Power Transistor • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on),max |
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Infineon |
IGBT Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive Application Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time 5 µs TRENCHSTOPTM and Fieldstop technology for 600 V a |
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Infineon |
IGBT andBenefits: HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQG •Maximumjunctiontemperature175°C •Pb-freeleadplating;RoHScompliant •Completeproductspec |
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Infineon |
Automotive MOSFET • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL3 up to 260°C peak reflow • 175°C operating temperature • Gr |
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Infineon |
IGBT TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowturn-offlosses •shorttailcurrent •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completepro |
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Desde 2024. D4U Semiconductor.
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