| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Infineon |
SPB21N50C3 • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS @ Tjmax RDS(on) ID 560 0.19 21 PG-TO263 V Ω A Type SPB21N50C3 |
|
|
|
|
Infineon |
SPD21N05L • N channel • Enhancement mode • Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current • Logic Level • dv/dt rated • 175˚C operating temperature VDS RDS(on) ID 55 0.04 20 V Ω A Type SPD |
|
|
|
|
Infineon Technologies |
Power Transistor 0D[LPXP5DWLQJV 3DUDPHWHU 'UDLQ6RXUFHYROWDJHVORSH VDS 9,' $Tj & 6\PERO GYGW 9DOXH 8QLW 9QV 7KHUPDO&KDUDFWHULVWLFV 3DUDPHWHU 7KHUPDOUHVLVWDQFHMXQFWLRQFDVH 7KHUPDOUHVLVWDQFHMXQFWLRQDPELHQWOHDGHG 6ROGH |
|
|
|
|
Infineon |
Dual N-Channel OptiMOS MOSFET Product Summary • Dual N-channel OptiMOS™ MOSFET • Optimized for high performance Buck converter • Logic level (4.5V rated) VDS RDS(on),max • N-channel ID • Qualified according to JEDEC1) for target applications VGS=10 V VGS=4.5 V • Pb-free lea |
|
|
|
|
Infineon Technologies |
Power-Transistor Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 + 9H"[Z# Q' 3 81>>5< >? B=1<<5F5< Q 1F1<1>3 85 D5CD54 Q |
|
|
|
|
Infineon |
Phase Control Thyristor Volle Sperrfähigkeit 50/60Hz über einen weiten Temperaturbereich Hohe DC Sperrstabilität Hohe Stoßstrombelastbarkeit Hoher Gehäusebruchstrom Hohe Einschalt di/dt Fähigkeit Full blocking 50/60Hz over a wide range temperature range High |
|
|
|
|
Infineon |
Power Transistor Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 + 9H"[Z# Q' 3 81>>5< >? B=1<<5F5< Q 1F1<1>3 85 D5CD54 Q) |
|
|
|
|
Infineon |
Power Transistor Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 + 9H"[Z# Q' 3 81>>5< >? B=1<<5F5< Q 1F1<1>3 85 D5CD54 Q) |
|
|
|
|
Infineon |
MOSFET •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •100%avalanchetested •175°Coperatingtemperature •Optimizedformotordrivesandbatterypowered |
|
|
|
|
Infineon Technologies |
SIPMOS Power-Transistor N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS R DS(on) ID 100 80 21 P-TO220-3-1 V A m Type SPP21N10 SPB21N10 SPI21N10 Package P-TO220-3-1 P-TO263-3-2 P-T |
|
|
|
|
Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPB16N50C3 VDS @ Tjmax 560 V RDS(on) 0.28 Ω ID 16 A PG-TO263 T |
|
|
|
|
Infineon Technologies |
SIPMOS Power-Transistor N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS R DS(on) ID 100 80 21 P-TO220-3-1 V m A Type SPP21N10 SPB21N10 SPI21N10 Package P-TO220-3-1 P-TO263-3-2 P-TO |
|
|
|
|
Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO |
|
|
|
|
Infineon |
Crow Bar Diode Full blocking capability 50/60Hz over a wide temperature range High DC blocking stability High surge current capability High case non-rupture current Soft turn-off behavior at high turn-off di/dt Typische Anwendungen Rückschwing- Diode f |
|
|
|
|
Infineon Technologies |
SIPMOS Power-Transistor N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS R DS(on) ID 100 80 21 P-TO220-3-1 V m A Type SPP21N10 SPB21N10 SPI21N10 Package P-TO220-3-1 P-TO263-3-2 P-TO |
|
|
|
|
Infineon Technologies |
SIPMOS Power-Transistor N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS R DS(on) ID 100 80 21 P-TO220-3-1 V m A Type SPP21N10 SPB21N10 SPI21N10 Package P-TO220-3-1 P-TO263-3-2 P-TO |
|
|
|
|
Infineon Technologies |
SIPMOS Power-Transistor N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS R DS(on) ID 100 80 21 P-TO220-3-1 V m A Type SPP21N10 SPB21N10 SPI21N10 Package P-TO220-3-1 P-TO263-3-2 P-TO |
|
|
|
|
Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO |
|
|
|
|
Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO |
|
|
|
|
Infineon |
Power Transistor • N channel • Enhancement mode • Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current • Logic Level • dv/dt rated • 175˚C operating temperature VDS RDS(on) ID 55 0.04 20 V Ω A Type SPD |
|
Desde 2024. D4U Semiconductor.
|