SPB21N10 Infineon Technologies SIPMOS Power-Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

SPB21N10

Infineon Technologies
SPB21N10
SPB21N10 SPB21N10
zoom Click to view a larger image
Part Number SPB21N10
Manufacturer Infineon (https://www.infineon.com/) Technologies
Description and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your neare...
Features Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area F) Symbol min. RthJC RthJA RthJA - Values typ. max. 1.7 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 100 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = VDS ID = 44 µA Zero gate voltage drain current VD...

Document Datasheet SPB21N10 Data Sheet
PDF 483.76KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 SPB21N10
Infineon Technologies
SIPMOS Power-Transistor Datasheet
2 SPB21N50C3
Infineon Technologies
Power Transistor Datasheet
3 SPB21N50C3
INCHANGE
N-Channel MOSFET Datasheet
4 SPB200UFA
VMI
(SPBxx0UFA) Single Phase Bridge Datasheet
5 SPB200UFB
VMI
(SPBxx0UFB) Single Phase Bridge Datasheet
6 SPB2026Z
RFMD
0.7GHz to 2.2GHz 2W InGaP AMPLIFIER Datasheet
More datasheet from Infineon Technologies
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad