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Infineon Technologies |
IPD20N03L •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V mΩ A •Logic Level •Low On-Resistance RDS(on) www.DataSheet4U.com •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance •175°C operating tem |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP20N60S5 VDS RDS(on) ID 600 0. |
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Infineon |
Power Transistor QGVWRUDJHWHPSHUDWXUH Reverse diode dv/dt 7) 6\PERO ,' ,'SXOV ($6 EAR ,$5 VGS VGS Ptot 7M7VWJ dv/dt 9DOXH 633B, 63$ ± ± 15 8QLW $ $ P- |
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Infineon |
Power Transistor • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 0.8 m 120 A PG-TDSON-8 • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow 1 • 175°C operating temperature • Green Pro |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS RDS(on) ID 600 0.19 20 P-TO247 V Ω A Type SPW20N60S5 Package |
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Infineon Technologies |
IGBT Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very |
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Infineon Technologies |
IGBT C TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •comp |
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Infineon |
Power-Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to |
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Infineon |
Power MOSFET |
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Infineon Technologies |
IGBT Type IKP20N60T IKW20N60T Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25°C www.DataSheet4U.net Symbol VCE IC Value 600 40 20 Unit V A TC = 100°C Pulsed collector current, tp limited by Tjmax Tu |
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Infineon |
MOSFET •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Extremelylowon-resistanceRDS(on) •Highcurrentcapability •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortar |
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Infineon |
IGBT andBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQg •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature175°C •Qua |
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Infineon |
IGBT C •AutomotiveAECQ101qualified •DesignedforDC/ACconvertersforAutomotiveApplication •VerylowVCE(sat)1.5V(typ.) •MaximumJunctionTemperature150°C •Shortcircuitwithstandtime5µs •TRENCHSTOPTMandFieldstoptechnologyfor600 |
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Infineon |
IGBT TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •complete |
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Infineon |
MOSFET •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •100%avalanchetested •175°Coperatingtemperature •Optimizedformotordrivesandbatterypowered |
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Infineon |
MOSFET •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Ide |
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Infineon Technologies |
Reverse Conducting IGBT • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavio |
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Infineon |
High Speed IGBT Maximum Power Dissipation PD @TC = 25°C Linear Derating Factor Gate-to-Source Voltage VGS Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 |
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Infineon |
Power-Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1 |
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Infineon |
Power Transistor • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPG20N06S2L-65 Product Summary VDS RDS(on),max3) ID 55 V 65 |
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Desde 2024. D4U Semiconductor.
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