Infineon 072 Hoja de datos

No.	parte #	Fabricante	Descripción
1	072N15N	Infineon	Power Transistor Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 R 9H"[Z# Product Summary V 9H R , ? >=1H-( I9 )-( J /&* Y" )(( 6 Q T ? @5B1D9>7 D5=@5B1DEB5 Q) 2 6B55 <514 @<1D9>7 + ?
2	PTFA072401EL	Infineon	Thermally-Enhanced High Power RF LDMOS FETs • • Broadband internal matching Typical two-carrier WCDMA performance at 770 MHz, 30 V - Average output power = 40 W - Linear Gain = 19 dB - Efficiency = 25% - Intermodulation distortion = –39 dBc Typical CW performance, 770 MHz, 30 V - Output power
3	PTFA072401FL	Infineon	Thermally-Enhanced High Power RF LDMOS FETs • • Broadband internal matching Typical two-carrier WCDMA performance at 770 MHz, 30 V - Average output power = 40 W - Linear Gain = 19 dB - Efficiency = 25% - Intermodulation distortion = –39 dBc Typical CW performance, 770 MHz, 30 V - Output power
4	072N10N	Infineon	Power Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1
5	IMT65R072M1H	Infineon	MOSFET •Optimizedswitchingbehaviorathighercurrents •CommutationrobustfastbodydiodewithlowQf •Superiorgateoxidereliability •Tj,max=175°Candexcellentthermalbehavior •LowerRDS(on)andpulsecurrentdependencyontemperature •Increased
6	BSO072N03S	Infineon Technologies AG	OptiMOS2 Power-Transistor • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche
7	BSC072N025SG	Infineon Technologies	Power-Transistor • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC for target applications • Logic level / N-channel • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
8	BSC072N03LDG	Infineon Technologies	OptiMOS3 Power-Transistors • Dual N-channel, logic level • Fast switching MOSFETs for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) •
9	BSC072N08NS5	Infineon	MOSFET •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC6
10	IPI072N10N3G	Infineon	Power Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1
11	IPI072N10N3	Infineon	Power Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1
12	IPP072N10N3	Infineon	Power Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1
13	IPP072N10N3G	Infineon	Power Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1
14	BSC072N025S	Infineon Technologies	Power-Transistor • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC for target applications • Logic level / N-channel • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
15	IPB072N15N3G	Infineon Technologies	Power Transistor Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 R 9H"[Z# Product Summary V 9H R , ? >=1H-( I9 )-( J /&* Y" )(( 6 Q T ? @5B1D9>7 D5=@5B1DEB5 Q) 2 6B55 <514 @<1D9>7 +
16	IPB072N15N3	Infineon	Power-Transistor Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 R 9H"[Z# Product Summary V 9H R , ? >=1H-( I9 )-( J /&* Y" )(( 6 Q T ? @5B1D9>7 D5=@5B1DEB5 Q) 2 6B55 <514 @<1D9>7 + ?