IPI072N10N3G |
Part Number | IPI072N10N3G |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | IPP072N10N3 G IPI072N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS... |
Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPI072N10N3 G IPP072N10N3 G 100 V 7.2 mΩ 80 A Package Marking PG-TO262-3 072N10N PG-TO220-3 072N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C2) T C=100 °C ... |
Document |
IPI072N10N3G Data Sheet
PDF 307.82KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPI072N10N3 |
INCHANGE |
N-Channel MOSFET | |
2 | IPI072N10N3 |
Infineon |
Power Transistor | |
3 | IPI070N08N3 |
Infineon |
Power-Transistor | |
4 | IPI070N08N3G |
Infineon |
Power-Transistor | |
5 | IPI070N08N3G |
INCHANGE |
N-Channel MOSFET | |
6 | IPI075N15N3 |
Infineon |
Power-Transistor |