Infineon 070 Hoja de datos

No.	parte #	Fabricante	Descripción
1	60R070F7	Infineon	MOSFET •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)QgandRDS(on)Eoss •Best-in-classRDS(on)inSMDandTHDpackages Benefits •Ex
2	IGO60R070D1	Infineon	600V enhancement-mode Power Transistor  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications acc
3	IGOT60R070D1	Infineon	600V enhancement-mode Power Transistor  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications acc
4	IGLD60R070D1	Infineon	Power Transistor  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications acc
5	IGT60R070D1	Infineon	600V enhancement-mode Power Transistor  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications acc
6	BSC070N10NS5	Infineon	MOSFET •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC6
7	0702LS	Infineon	MOSFET •Idealforhigh-frequencyswitching •Optimizedforchargers •100%avalanchetested •Superiorthermalresistance •N-channel,Logiclevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •QualifiedforStandardGr
8	MA12070	Infineon	Filterless and High-Efficiency +4V to +26V Audio Amplifier an embedded digital power management scheme. The power management algorithm dynamically adjusts switching frequency and modulation to optimize power loss and EMI across the output power range. A 4th order feedback loop ensures low distortion and a hi
9	BTS50070-1TMA	Infineon Technologies	Smart High-Side Power Switch • Part of scalable product family • Load current sense • Reversave™ • Very low standby current • Current controlled input pin • Improved electromagnetic compatibility (EMC) • Fast demagnetization of inductive loads • Stable behavior at under-voltage
10	BTS50070-1TMB	Infineon Technologies	Smart High-Side Power Switch • Part of scalable product family • Load current sense • Reversave™ • Very low standby current • Current controlled input pin • Improved electromagnetic compatibility (EMC) • Fast demagnetization of inductive loads • Stable behavior at under-voltage
11	PTFA210701F	Infineon	Thermally-Enhanced High Power RF LDMOS FET include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA210701E Packag
12	IGT40R070D1E8220	Infineon	Power Transistor  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified according to JEDEC Standards (J
13	IGB070S10S1	Infineon	Transistor •Enhancementmodepowertransistor-normallyOFFswitch •Noreverserecoverycharge •Reverseconductioncapability •Lowgatecharge,lowoutputcharge •QualifiedaccordingtoJEDECfortargetapplications Potentialapplications •ClassDAudio •
14	IJW120R070T1	Infineon	Silicon Carbide-Junction Field Effect Transistor  Ultra fast switching  Internal fast body diode  Low intrinsic capacitance  Low gate charge  175 °C maximum operating temperature Gate Drain Source Drain Pin 2 Gate Pin 1 Benefits  Enabling higher system efficiency and/ or higher output p
15	ICE5QR1070AZ	Infineon	Integrated 700V / 800V avalanche rugged CoolMOS  Integrated 700 V/800 V avalanche rugged CoolMOS™  Minimum switching frequency difference between low & high line for higher efficiency & better EMI  Enhanced Active Burst Mode with selectable entry and exit standby power  Active Burst Mode to re
16	IPL65R070C7	Infineon	MOSFET •IncreasedMOSFETdv/dtruggedness •BetterefficiencyduetobestinclassFOMRDS(on)EossandRDS(on)Qg •ThinPAKSMDPackagewithverylowparasiticinductancetoenablefast andreliableswitchingwithminimumofsizetoincreasepower-density
17	GTVA220701FA	Infineon	Thermally-Enhanced High Power RF GaN HEMT input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • Input matched • Typical Pulsed CW performance, 2170 MHz, 48 V - Output power at P3dB = 70 W - Efficiency = 70% - Gain = 20 dB • Capable of handling
18	IPP60R070CFD7	Infineon	MOSFET
19	070N10NS	Infineon	Power-Transistor MOSFET
20	BSC0702LS	Infineon	MOSFET •Idealforhigh-frequencyswitching •Optimizedforchargers •100%avalanchetested •Superiorthermalresistance •N-channel,Logiclevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •QualifiedforStandardGr