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Inchange Semiconductor |
Silicon NPN Darlingtion Power Transistor istor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN PMD1601K MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0 60 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 100mA; |
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Inchange Semiconductor |
Silicon NPN Darlingtion Power Transistor istor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN PMD1602K MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0 80 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 100mA; |
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Inchange Semiconductor |
Silicon NPN Darlingtion Power Transistor ansistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN PMD1603K MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0 100 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 10 |
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Inchange Semiconductor |
Silicon PNP Darlingtion Power Transistor r Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS PMD1701K MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA; IB= 0 -60 V V(BR)CER Collector-Emitter Breakdown Voltage |
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Inchange Semiconductor |
Silicon PNP Darlingtion Power Transistor ower Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS PMD1703K MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA; IB= 0 -100 V V(BR)CER Collector-Emitter Breakdown Volta |
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Inchange Semiconductor |
Silicon PNP Darlingtion Power Transistor r Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS PMD1702K MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA; IB= 0 -80 V V(BR)CER Collector-Emitter Breakdown Voltage |
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Desde 2024. D4U Semiconductor.
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