PMD1601K |
Part Number | PMD1601K |
Manufacturer | Inchange Semiconductor |
Description | ·High DC current gain ·Collector-Emitter Breakdown VoltageV(BR)CEO= 60V(Min) ·Complement to type PMD1701K APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications... |
Features |
istor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
PMD1601K
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 100mA; IB= 0
60
V
V(BR)CER
Collector-Emitter Breakdown Voltage
IC= 100mA; RBE= 2.2kΩ
60
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 10A; IB= 40mA
2.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 10A; IB= 40mA
2.8
V
VBE(on)
Base-Emitter On Voltage
IC= 10A; VCE= 3V
2.8
V
ICER
Collector Cutoff current
VCE= 60V; RBE=2.2KΩ
7.0
mA
IEBO
Emitter Cut-off current
VEB= 5V; IC= 0
3.0
mA
hFE
DC... |
Document |
PMD1601K Data Sheet
PDF 111.68KB |
Similar Datasheet
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