Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | PMD1601K |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | PMD1601K |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Darlingtion Power Transistor |
| Description | ·High DC current gain ·Collector-Emitter Breakdown VoltageV(BR)CEO= 60V(Min) ·Complement to type PMD1701K APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Volta. |
| Features | istor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN PMD1601K MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0 60 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 100mA; RBE= 2.2kΩ 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 40mA 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB=. |
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| 1 | PMD1602K |
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| 2 | PMD1602K |
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| 3 | PMD1603K |
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| 4 | PMD1603K |
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| 5 | PMD16K |
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| 6 | PMD16K100 |
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| 7 | PMD16K100 |
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| 8 | PMD16K60 |
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| 9 | PMD16K60 |
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| 10 | PMD16K80 |
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Desde 2024. D4U Semiconductor.
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