| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistor sc Silicon NPN Power Transistor MJB44H11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) VBE(sat) ICEO Collector-Emitter Saturation |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistor itter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)* VBE(on)* ICEO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC=6A; IB= 600mA IC= 6A; VCE=4V VCE= 60V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hF |
|
|
|
|
Inchange Semiconductor |
Silicon PNP Power Transistor )CEO Collector-Emitter Breakdown Voltage IC=- 30mA; IB= 0 VCE(sat) VBE(sat) ICEO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IC=-8A; IB=- 400mA IC=-8A; IB= -800mA VCE= -80V; IE= 0 IEBO Emitter Cu |
|
|
|
|
Inchange Semiconductor |
Silicon PNP Power Transistor tor-Emitter Breakdown Voltage IC=- 30mA; IB= 0 VCE(sat)* VBE(on)* ICEO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC=-6A; IB= -600mA IC=- 6A; VCE=-4V VCE=-60V; IE= 0 IEBO Emitter Cutoff Current VEB=-5V |
|
Desde 2024. D4U Semiconductor.
|