Inchange Semiconductor D45 Hoja de datos

No.	parte #	Fabricante	Descripción
1	D45VH10	Inchange Semiconductor	Silicon PNP Power Transistors n to Case 1.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors D45VH Series ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise spec
2	D458	Inchange Semiconductor	2SD458 fied SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A VBE(sat) Base-Emitter Saturatio
3	D45VH1	Inchange Semiconductor	Silicon PNP Power Transistors n to Case 1.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors D45VH Series ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise spec
4	3DD4515	Inchange Semiconductor	Silicon NPN Power Transistor BOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 hFE1 DC Current Gain IC= 2A; VCE= 5V hFE2
5	MJD45H11	Inchange Semiconductor	Silicon PNP Power Transistor tance,Junction to Ambient 71.4 ℃/W MJD45H11 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors MJD45H11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIO
6	D45C2	Inchange Semiconductor	Silicon PNP Power Transistors al Resistance, Junction to Case 4.2 ℃/W D45C2 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors D45C2 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITION
7	D45VH7	Inchange Semiconductor	Silicon PNP Power Transistors n to Case 1.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors D45VH Series ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise spec
8	D45VH4	Inchange Semiconductor	Silicon PNP Power Transistors n to Case 1.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors D45VH Series ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise spec
9	D45VH	Inchange Semiconductor	Silicon PNP Power Transistors Specification D45VH Series isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification D45VH Series ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS
10	D45C9	Inchange Semiconductor	Silicon PNP Power Transistors Resistance, Junction to Case MAX UNIT 4.2 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors D45C9 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS
11	D45C6	Inchange Semiconductor	Silicon PNP Power Transistors Resistance, Junction to Case MAX UNIT 4.2 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors D45C6 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS
12	D45C5	Inchange Semiconductor	Silicon PNP Power Transistors al Resistance, Junction to Case 4.2 ℃/W D45C5 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors D45C5 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITION
13	D45C4	Inchange Semiconductor	Silicon PNP Power Transistors al Resistance, Junction to Case 4.2 ℃/W D45C4 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors D45C4 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITION
14	D45C3	Inchange Semiconductor	Silicon PNP Power Transistors al Resistance, Junction to Case 4.2 ℃/W D45C3 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors D45C3 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITION
15	D45C12	Inchange Semiconductor	Silicon PNP Power Transistors ebsite：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification D45C12 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat) Collector-Em
16	D45C10	Inchange Semiconductor	Silicon PNP Power Transistors l Resistance, Junction to Case MAX UNIT 4.2 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors D45C10 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITI
17	D45C11	Inchange Semiconductor	Silicon PNP Power Transistors l Resistance, Junction to Case MAX UNIT 4.2 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors D45C11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITI
18	2SD458	Inchange Semiconductor	Silicon NPN Power Transistors CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A