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Inchange Semiconductor |
Silicon NPN Power Transistor CS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(sus) Collector-emitter sustaining Voltage IC= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB=1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 5.0A; |
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Inchange Semiconductor |
Silicon NPN Power Transistor SYMBOL PARAMETER CONDITIONS V(BR)EBO Eollector-base breakdown Voltage IC= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB=1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 5.0A; IB=1.25A ICBO Collector Cutoff Current |
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Inchange Semiconductor |
Silicon NPN Power Transistor CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 70V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gai |
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Inchange Semiconductor Company |
Silicon NPN Darlington Power Transistor down Voltage IC= 50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff Current VCB= |
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Inchange Semiconductor |
Silicon NPN Power Transistor STICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 2V |
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Inchange Semiconductor |
Silicon NPN Power Transistor age IC= 1mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A |
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Inchange Semiconductor |
Silicon NPN Power Transistor ge IC= 1A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 0.1A ; VCE= 5V fT Current-Gain—Bandwidth Prod |
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Inchange Semiconductor |
Power Transistor n Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 6A; VCE= 5V ICBO Collector C |
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Inchange Semiconductor |
Silicon NPN Power Transistor TICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 60mA V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA; IB= |
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Inchange Semiconductor |
Silicon NPN Power Transistor 0.25 V 1.2 V 10 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 10 μA hFE-1NOTE DC Current Gain IC= 0.2A; VCE= 2V 60 hFE-2NOTE DC Current Gain IC= 0.6A; VCE= 2V 100 400 hFE-3NOTE DC Current Gain IC= 2A; VCE= 2V 50 COB Output Capac |
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Inchange Semiconductor |
Silicon NPN Power Transistor 0 0.25 V 1.2 V 10 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 10 μA hFE-1NOTE DC Current Gain IC= 0.2A; VCE= 2V 60 hFE-2NOTE DC Current Gain IC= 0.6A; VCE= 2V 100 400 hFE-3NOTE DC Current Gain IC= 2A; VCE= 2V 50 COB Output C |
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Inchange Semiconductor |
Silicon NPN Power Transistor nductor 2SD1802 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 100mA VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 100mA V(BR)CBO Colle |
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Inchange Semiconductor |
Silicon NPN Power Transistor Semiconductor 2SD1816 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 200mA VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 200mA V(BR)CBO |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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Inchange Semiconductor |
TO-126 Silicon NPN Power Transistor MBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 0.15A VBE(sat) Base-Emitter Saturation Voltage IC= 3.0A; IB= 0.15A ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= |
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Inchange Semiconductor |
2SD1850 BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=B 1.5A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB=B 1.5A hFE-1 DC Current Gain IC= 1A; VCE= 5V 8.0 V 1.5 V 5 25 hFE- |
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Inchange Semiconductor |
Silicon NPN Power Transistor unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Coll |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DE |
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Inchange Semiconductor |
Silicon NPN Power Transistor nductor 2SD1801 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 50mA V(BR)CBO Collect |
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Desde 2024. D4U Semiconductor.
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