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Inchange Semiconductor |
2SD1413 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=25mA; IB=0 IC=2A ;IB=4mA IC=2A ;I |
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Inchange Semiconductor |
Silicon NPN Power Transistor ; IB= 0.3A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 5V ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE-1 DC Current Gain IC= 20mA; VCE= 5V hFE-2 DC Current Gain IC= 1A; VCE= 5V hFE-3 D |
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Inchange Semiconductor |
Power Transistor C= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 4V ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain I |
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Inchange Semiconductor |
Silicon NPN Power Transistor ebsite：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJD148 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC |
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Inchange Semiconductor |
Silicon NPN Power Transistors specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 6mA ICBO Collector Cutoff C |
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Inchange Semiconductor |
Silicon NPN Transistor 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 4V ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= |
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Inchange Semiconductor |
Power Transistor r-Emitter Saturation Voltage IC= 2A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A ICBO Collector Cutoff Current VCB= 1200V; IE= 0 2SD1493 MIN TYP. MAX UNIT 800 V 6 V 5.0 V 1.5 V 100 μA NOTICE： ISC reserves the r |
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Inchange Semiconductor |
Power Transistor IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A ICBO Collector Cutoff Current VCB= 600V; IE= 0 5.0 V 1.5 V 10 μA tf Fall Time IC= 2.75A, |
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Inchange Semiconductor |
Power Transistor ; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 3.5A; IB= 1A ICBO Collector Cutoff Current VCB= 600V; IE= 0 hFE DC Current Gain IC= 1A; VCE= 5V 2SD1495 MIN TYP. MAX UNIT 600 V 6 V 5.0 V 1.5 V 10 μA 6 NOTICE： ISC reserves th |
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Inchange Semiconductor |
Silicon NPN Power Transistor tage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 5V ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current |
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Inchange Semiconductor |
Power Transistor er-Base Breakdown Voltage IE= 200mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current hFE DC Current Gain IC= 2.5A; IB= 0.8A VCB= 750V; IE= 0 V |
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Desde 2024. D4U Semiconductor.
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