2SD1475 |
Part Number | 2SD1475 |
Manufacturer | Inchange Semiconductor |
Description | ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device perf... |
Features |
10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
IC= 3A; VCE= 4V
fT
Current-Gain—Bandwidth Product
IC= 0.2A; VCE= 12V
Switching times
ton
Turn-on Time
tstg
Storage Time
IC= 4A; IB1= IB2= 0.4A
tf
Fall Time
2SD1475
MIN TYP. MAX UNIT
60
V
1.0
V
1.2
V
100 μA
100 μA
40
320
20
50
MHz
0.35
μs
1.0
μs
0.3
μs
NOTICE: ISC reserves the ri... |
Document |
2SD1475 Data Sheet
PDF 211.20KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SD1470 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor | |
2 | 2SD1471 |
Hitachi Semiconductor |
Silicon NPN Planar Transistor | |
3 | 2SD1472 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor | |
4 | 2SD1474 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
5 | 2SD1475 |
Panasonic |
Silicon NPN Transistor | |
6 | 2SD1476 |
Inchange Semiconductor |
Power Transistor |