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Inchange Semiconductor |
Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA |
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Inchange Semiconductor |
2SC2238 e specified PARAMETER 2SC2238 V(BR)CEO Collector-emitter breakdown voltage 2SC2238A 2SC2238B V(BR)EBO VCEsat VBE ICBO IEBO hFE Cob fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off curren |
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Inchange Semiconductor |
Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMET |
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Inchange Semiconductor |
Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA |
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Inchange Semiconductor |
Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA |
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Inchange Semiconductor |
Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMET |
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Inchange Semiconductor |
Silicon NPN Power Transistor ER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA; IB= 10mA VBE(on) Base-Emitter On Voltage IC= 50mA ; VCE= 10V ICBO Collector Cutoff Current VCB= 240V; IE=0 IEB |
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Inchange Semiconductor |
Power Transistor 0 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.5 V hFE DC Current Gain ICBO Collector Cutoff Current ICEO Collector Cutoff Current IC= 2A; VCE= 5V VC |
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Inchange Semiconductor |
Silicon NPN Power Transistors |
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Inchange Semiconductor |
Silicon NPN Power Transistors 1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= |
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Inchange Semiconductor |
Silicon NPN Power Transistors C= 1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB |
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Inchange Semiconductor |
Silicon NPN Power Transistor CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB=0.4A ICBO Collector Cutoff Current VCB= 170V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE -1 DC Current |
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Inchange Semiconductor |
Power Transistor 0 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V hFE DC Current Gain ICBO Collector Cutoff Current ICEO Collector Cutoff Current IC= 3A; VCE= 5V VC |
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Inchange Semiconductor |
Silicon NPN Power Transistor wise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A hFE-1 DC Curren |
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Desde 2024. D4U Semiconductor.
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