Inchange Semiconductor BUT Hoja de datos

No.	parte #	Fabricante	Descripción
1	BUT11AI	Inchange Semiconductor	Silicon NPN Power Transistor EO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 450 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.33A 1.5 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current I
2	BUT21CF	Inchange Semiconductor	Silicon NPN Power Transistor n 1 INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification BUT21BF/CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUT21B
3	BUT21BF	Inchange Semiconductor	Silicon NPN Power Transistor n 1 INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification BUT21BF/CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUT21B
4	BUT21C	Inchange Semiconductor	Silicon NPN Power Transistor c Product Specification BUT21B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUT21B BUT21C IC= 0.1A ;IB= 0; L= 25mH VCE(sat) Collector-Emitter Satur
5	BUT11FI	Inchange Semiconductor	Silicon NPN Power Transistor SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current G
6	BUT93	Inchange Semiconductor	Silicon NPN Power Transistor ecified SYMBOL PARAMETER CONDITIONS MIN TYP. BUT93 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0, L= 125mH 350 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat)-1 Collector-Emitter Saturation
7	BUTW92	Inchange Semiconductor	Silicon NPN Power Transistor -Emitter Breakdown Voltage IC= 5mA; VEB =0 500 V VEBO Emitter-Base Breakdown Voltage IE= 1mA 7 VCE(sat) Collector-Emitter Saturation Voltage IC= 60A; IB= 15A 1.0 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current I
8	BUT21B	Inchange Semiconductor	Silicon NPN Power Transistor c Product Specification BUT21B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUT21B BUT21C IC= 0.1A ;IB= 0; L= 25mH VCE(sat) Collector-Emitter Satur