BUT11AI Inchange Semiconductor Silicon NPN Power Transistor Datasheet. existencias, precio

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BUT11AI

Inchange Semiconductor
BUT11AI
BUT11AI BUT11AI
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Part Number BUT11AI
Manufacturer Inchange Semiconductor
Description ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control system...
Features EO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 450 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.33A 1.5 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 2.5A; IB= 0.33A VCE=RatedVCES ;VBE= 0 VCE=RatedVCES ;VBE= 0;TC=125℃ VEB= 9V; IC= 0 1.3 V 1 2 mA 10 mA hFE-1 DC Current Gain IC= 5mA; VCE= 5V 10 35 hFE-2 DC Current Gain IC= 0.5A; VCE= 5V 14 35 hFE-3 DC Current Gain IC= 2.5A; VCE= 5V 9 17 Switching Times; Resistive Load ton Turn-on Time 1.0 μs ts Storage Time IC= 2.5A;I...

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