Inchange Semiconductor BU9 Hoja de datos

No.	parte #	Fabricante	Descripción
1	BU920P	Inchange Semiconductor	Silicon NPN Power Transistor TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 350 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA 1.8 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 140mA 1.8 V VBE(sat)-1 B
2	BU910	Inchange Semiconductor	Silicon NPN Darlington Power Transistor RISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 50mA VCE(sat)-2 Collector-Emitter Saturation Volt
3	BU912	Inchange Semiconductor	Silicon NPN Darlington Power Transistor RISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 50mA VCE(sat)-2 Collector-Emitter Saturation Volt
4	BU999	Inchange Semiconductor	Silicon NPN Power Transistor ed SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 2.5A VBE(sat)-1 Base-Emi