BU912 Inchange Semiconductor Silicon NPN Darlington Power Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

BU912

Inchange Semiconductor
BU912
BU912 BU912
zoom Click to view a larger image
Part Number BU912
Manufacturer Inchange Semiconductor
Title Silicon NPN Darlington Power Transistor
Features RISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A VBE(sat)-1 Base-Emitter Satu...

Document Datasheet BU912 Data Sheet
PDF 211.60KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 BU910
Inchange Semiconductor
Silicon NPN Darlington Power Transistor Datasheet
2 BU911
INCHANGE
NPN Transistor Datasheet
3 BU911
ST Microelectronics
MEDIUM VOLTAGE NPN IGNITION DARLINGTON Datasheet
4 BU911
SavantIC
SILICON POWER TRANSISTOR Datasheet
5 BU911
Comset Semiconductors
HIGH VOLTAGE POWER DARLINGTON Datasheet
6 BU91501KV-M
ROHM
Multi- function LCD Segment Drivers Datasheet
More datasheet from Inchange Semiconductor
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad