Inchange Semiconductor BD9 Hoja de datos

No.	parte #	Fabricante	Descripción
1	BD954	Inchange Semiconductor	Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown
2	BD950	Inchange Semiconductor	Silicon PNP Power Transistor L CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage I
3	BD949F	Inchange Semiconductor	Silicon NPN Power Transistor /951F/953F/955F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD949F VCEO(SUS) Collector-Emitter Sustaining Voltage BD951F BD953F IC= 30mA ; IB= 0 BD955F VCE(sat) VBE(on) ICBO ICEO Collector-Emit
4	BD909	Inchange Semiconductor	Silicon NPN Power Transistors CS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC=
5	BD912	Inchange Semiconductor	Silicon NPN Power Transistors ified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -2.5A VBE(sat) B
6	BD933	Inchange Semiconductor	Silicon NPN Power Transistor tion to Ambient MAX 4.17 70 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD933/935/937/939/941 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER
7	BD935	Inchange Semiconductor	Silicon NPN Power Transistor tion to Ambient MAX 4.17 70 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD933/935/937/939/941 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER
8	BD947	Inchange Semiconductor	Silicon NPN Power Transistor egistered trademark isc Silicon NPN Power Transistor BD943/945/947 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD943 BD945 BD947 IC= 30mA ; IB= 0 V
9	BD945	Inchange Semiconductor	Silicon NPN Power Transistor egistered trademark isc Silicon NPN Power Transistor BD943/945/947 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD943 BD945 BD947 IC= 30mA ; IB= 0 V
10	BD956	Inchange Semiconductor	Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown
11	BD955F	Inchange Semiconductor	Silicon NPN Power Transistor /951F/953F/955F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD949F VCEO(SUS) Collector-Emitter Sustaining Voltage BD951F BD953F IC= 30mA ; IB= 0 BD955F VCE(sat) VBE(on) ICBO ICEO Collector-Emit
12	BD953F	Inchange Semiconductor	Silicon NPN Power Transistor /951F/953F/955F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD949F VCEO(SUS) Collector-Emitter Sustaining Voltage BD951F BD953F IC= 30mA ; IB= 0 BD955F VCE(sat) VBE(on) ICBO ICEO Collector-Emit
13	BD951F	Inchange Semiconductor	Silicon NPN Power Transistor /951F/953F/955F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD949F VCEO(SUS) Collector-Emitter Sustaining Voltage BD951F BD953F IC= 30mA ; IB= 0 BD955F VCE(sat) VBE(on) ICBO ICEO Collector-Emit
14	BD952	Inchange Semiconductor	Silicon PNP Power Transistor L CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage I
15	BD952F	Inchange Semiconductor	Silicon PNP Power Transistor stor BD950F/952F/954F/956F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD950F VCEO(SUS) Collector-Emitter Sustaining Voltage BD952F BD954F IC= -30mA ; IB= 0 BD956F VCE(sat) Collector-Emitter Sa
16	BD950F	Inchange Semiconductor	Silicon PNP Power Transistor stor BD950F/952F/954F/956F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD950F VCEO(SUS) Collector-Emitter Sustaining Voltage BD952F BD954F IC= -30mA ; IB= 0 BD956F VCE(sat) Collector-Emitter Sa
17	BD954F	Inchange Semiconductor	Silicon PNP Power Transistor stor BD950F/952F/954F/956F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD950F VCEO(SUS) Collector-Emitter Sustaining Voltage BD952F BD954F IC= -30mA ; IB= 0 BD956F VCE(sat) Collector-Emitter Sa
18	BD956F	Inchange Semiconductor	Silicon PNP Power Transistor stor BD950F/952F/954F/956F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD950F VCEO(SUS) Collector-Emitter Sustaining Voltage BD952F BD954F IC= -30mA ; IB= 0 BD956F VCE(sat) Collector-Emitter Sa
19	BD939	Inchange Semiconductor	Silicon NPN Power Transistor tion to Ambient MAX 4.17 70 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD933/935/937/939/941 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER
20	BD937	Inchange Semiconductor	Silicon NPN Power Transistor tion to Ambient MAX 4.17 70 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD933/935/937/939/941 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER