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BD939 |
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| Part Number | BD939 |
| Manufacturer | Inchange Semiconductor |
| Description | ·DC Current Gain- : hFE= 40(Min)@ IC= 150mA ·Complement to Type BD934/936/938/940/942 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for us... |
| Features |
tion to Ambient
MAX 4.17 70
UNIT ℃/W ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
BD933/935/937/939/941
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD933
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD935 BD937 BD939
IC= 30mA ; IB= 0
BD941
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
VBE(on) ICBO ICEO
Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current
IC= 1A; VCE= 2V
VCB= VCBOmax; IE= 0 VCB= VCBOmax; IE= 0,TJ=150℃
VCE= VCEOmax; ... |
| Document |
 BD939 Data Sheet
PDF 211.81KB |
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Desde 2024. D4U Semiconductor.
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