Inchange Semiconductor BD5 Hoja de datos

No.	parte #	Fabricante	Descripción
1	BD550	Inchange Semiconductor	Silicon NPN Power Transistors e IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.5A VBE(on) Base-Emitter On Voltage ICER Collector Cutoff Current IC= 4A ;VCE= 4V VCE= 110V; RBE= 100Ω ICEO Collector Cutoff Current VCE= 95V; IB= 0 IEBO Emitter
2	BD544	Inchange Semiconductor	Silicon PNP Power Transistors site：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BD544/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD544 -40 V(BR)CEO Colle
3	BD544B	Inchange Semiconductor	Silicon PNP Power Transistors site：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BD544/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD544 -40 V(BR)CEO Colle
4	BD546C	Inchange Semiconductor	Silicon PNP Power Transistor e 1.47 ℃/W Rth j-c Thermal Resistance,Junction to Ambient 35.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAME
5	BD546B	Inchange Semiconductor	Silicon PNP Power Transistor e 1.47 ℃/W Rth j-c Thermal Resistance,Junction to Ambient 35.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAME
6	BD546A	Inchange Semiconductor	Silicon PNP Power Transistor e 1.47 ℃/W Rth j-c Thermal Resistance,Junction to Ambient 35.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAME
7	BD546	Inchange Semiconductor	Silicon PNP Power Transistor e 1.47 ℃/W Rth j-c Thermal Resistance,Junction to Ambient 35.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAME
8	BD550B	Inchange Semiconductor	Silicon NPN Power Transistors ge IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.25A VBE(on) Base-Emitter On Voltage ICER Collector Cutoff Current IC= 2A ; VCE= 4V VCE= 250V; RBE= 100Ω ICEO Collector Cutoff Current VCE= 200V; IB= 0 IEBO Emit
9	BD544C	Inchange Semiconductor	Silicon PNP Power Transistors site：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BD544/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD544 -40 V(BR)CEO Colle
10	BD544A	Inchange Semiconductor	Silicon PNP Power Transistors site：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BD544/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD544 -40 V(BR)CEO Colle