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BD550B |
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| Part Number | BD550B |
| Manufacturer | Inchange Semiconductor |
| Description | High Power Dissipation ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use ... |
| Features |
ge IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.25A
VBE(on) Base-Emitter On Voltage
ICER
Collector Cutoff Current
IC= 2A ; VCE= 4V VCE= 250V; RBE= 100Ω
ICEO
Collector Cutoff Current
VCE= 200V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 2A ; VCE= 4V
fT
Current Gain-Bandwidth Product
IC= 0.2A ; VCE= 10V
BD550B
MIN TYP. MAX UNIT
250
V
2
V
2
V
1
mA
5
mA
1
mA
10
50
5
MHz
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information... |
| Document |
 BD550B Data Sheet
PDF 182.55KB |
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Desde 2024. D4U Semiconductor.
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