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Inchange Semiconductor |
TO-263 N-Channel MOSFET Transistor ·Drain Current –ID= 75A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.011Ω(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solenoid and relay d |
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Inchange Semiconductor |
N-Channel MOSFET Transistor RAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current tr Rise Time td(on) Turn-on Dela |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current ID= 75A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching mode power supplies ·General purpose power ampl |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current ID= 75A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching mode power supplies ·General purpose power ampli |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA VSD Diode Forward On-Voltage IS=75A ;VGS= 0 RDS(on) Drain-Source On-Res |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.011Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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Desde 2024. D4U Semiconductor.
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