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75N06 |
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| Part Number | 75N06 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High current capability ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Regulator ·Hi... |
| Features |
ECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
VSD
Diode Forward On-Voltage
IS=75A ;VGS= 0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=40A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
tr
Rise Time
td(on)
Turn-on Delay Time
VDS= 60V; VGS= 0 VGS=10V;ID=40A; VDD=25V;RG=50Ω
MIN TYPE MAX UNIT
60
V
2.0
4.0
V
1.6
V
0.014 Ω
±100 nA
250
µA
270 ns
1300
NOTICE： ISC reserves the rights to make changes of the... |
| Document |
 75N06 Data Sheet
PDF 229.44KB |
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Desde 2024. D4U Semiconductor.
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