Inchange Semiconductor 60N Hoja de datos

No.	parte #	Fabricante	Descripción
1	60N10	Inchange Semiconductor	N-Channel MOSFET Transistor ·Drain Current ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching mode power supplies ·General purpose power amp
2	60N05	Inchange Semiconductor	N-Channel MOSFET Transistor ered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor 60N05 SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT VDSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA 50 V VGS(th) Gate Thresho
3	FMW60N070S2HF	Inchange Semiconductor	N-Channel MOSFET Transistor ·Drain Current : ID= 53.2A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTIO
4	ISC60NM60L	Inchange Semiconductor	N-Channel MOSFET Transistor ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DES