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IXYS Corporation |
PolarTM HiPerFET Power MOSFET z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z Fast recovery intrinsic diode Applications z DC-DC converters z z z z Battery |
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IXYS Corporation |
Polar Power MOSFET HiPerFET • Silicon chip on Direct-Copper-Bond Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120/4.5..27 5 • • • • Weight substrate - High power dissipation - Isolated mounting surface |
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IXYS |
IGBT • NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • HiPerFRED™ diode - fast reverse recovery - low operating forw |
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IXYS |
IGBT • NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • HiPerFRED™ diode - fast reverse recovery - low operating forw |
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IXYS |
Power MOSFET z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z z Avalanche voltage rated Fast recovery intrinsic diode Applications z DC-DC co |
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IXYS Corporation |
Polar Power MOSFET HiPerFET • Silicon chip on Direct-Copper-Bond Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120/4.5..27 5 • • • • • substrate - High power dissipation - Isolated mounting surface - 250 |
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IXYS Corporation |
PolarHV HiPerFET Power MOSFET z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) Applications z DC-DC converters z z z z Symbol Test Conditions (TJ = 25°C, unless |
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IXYS |
Distributed Gate Thyristor |
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IXYS |
Power MOSFET z Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation z Avalanche rated z The rugged PolarPTM process z Low Q G z Low Drain-to-Tab capacitance z Low package inductance - |
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IXYS |
Distributed Gate Thyristor |
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IXYS |
Distributed Gate Thyristor |
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Desde 2024. D4U Semiconductor.
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