IXYS N04 Hoja de datos

No.	parte #	Fabricante	Descripción
1	N0465WN140	IXYS	Phase Control Thyristor
2	N0416SC080	IXYS	Phase Control Thyristor
3	IXTP220N04T2	IXYS	Power MOSFET z International Standard Packages z 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications • Synchronous Buck Converters • High Curre
4	IXTA300N04T2	IXYS	Power MOSFET  International Standard Packages  Avalanche Rated  Low Package Inductance  Fast Intrinsic Rectifier 175°C Operating Temperature  High Current Handling Capability  ROHS Compliant  High Performance Trench Technology for extremely low RDS(on) Adv
5	IXTA100N04T2	IXYS	Power MOSFET
6	N0465WN160	IXYS	Phase Control Thyristor
7	N0416SC020	IXYS	Phase Control Thyristor Stud
8	N0416SD020	IXYS	Phase Control Thyristor Stud
9	N0416SC080	IXYS	Phase Control Thyristor Stud
10	N0416SD080	IXYS	Phase Control Thyristor Stud
11	N0416SC040	IXYS	Phase Control Thyristor
12	IXTA340N04T4	IXYS	Power MOSFET
13	IXTN600N04T2	IXYS	Power MOSFET z z Mounting Torque Terminal Connection Torque z z z z z z International Standard Package miniBLOC, with Aluminium Nitride Isolation 175°C Operating Temperature Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalan
14	IXTA220N04T2	IXYS	Power MOSFET z International Standard Packages z 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications • Synchronous Buck Converters • High Curre
15	IXTA160N04T2	IXYS	Power MOSFET  International Standard Packages  Avalanche Rated  Low Package Inductance  Fast Intrinsic Rectifier 175°C Operating Temperature  High Current Handling Capability  ROHS Compliant  High Performance Trench Technology for extremely low RDS(on) Adv
16	IXTX600N04T2	IXYS	Power MOSFET z z z z z International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low R DS(on) Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID
17	IXTK600N04T2	IXYS	Power MOSFET z z z z z International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low R DS(on) Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID
18	IXTA270N04T4	IXYS	Power MOSFET
19	IXTN660N04T4	IXYS	Power MOSFET  International Standard Package 
20	IXTP300N04T2	IXYS	Power MOSFET  International Standard Packages  Avalanche Rated  Low Package Inductance  Fast Intrinsic Rectifier 175°C Operating Temperature  High Current Handling Capability  ROHS Compliant  High Performance Trench Technology for extremely low RDS(on) Adv