IXTN600N04T2 |
Part Number | IXTN600N04T2 |
Manufacturer | IXYS |
Description | TrenchT2TM GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTN600N04T2 VDSS ID25 = = RDS(on) ≤ 40V 600A 1.3mΩ miniBLOC, SOT-227 E153432 S Symbol VDSS VDG... |
Features |
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Mounting Torque Terminal Connection Torque
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International Standard Package miniBLOC, with Aluminium Nitride Isolation 175°C Operating Temperature Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on)
Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ±20V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 150°C Characteristic Values Min. Typ. Max. 40 1.5 3.5 ±200 V V nA
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Easy to Mount Space Savings High Power Density
Applicatio... |
Document |
IXTN600N04T2 Data Sheet
PDF 196.05KB |
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