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IXYS |
IXRH50N60 q q q A V W q IGBT with NPT (non punch through) structure reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery positive temperat |
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IXYS |
IGBT International Standard Package Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability Advantages High Power Density Low Gate Drive Requirement Applications Power Inver |
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IXYS |
IGBT l International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD l High frequency IGBT l High current handling capability l 2nd generation HDMOSTM process l MOS Gate turn-on - drive simplicity Applications l AC motor speed con |
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IXYS Corporation |
HiPerFET Power MOSFETs • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Symbol Test Con |
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IXYS Corporation |
HiPerFET Power MOSFETs • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Applications • DC |
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IXYS Corporation |
IGBT with Reverse Blocking capability q q q A V W q IGBT with NPT (non punch through) structure reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery positive temperat |
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IXYS Corporation |
Power MOSFET Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - |
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IXYS |
600V IGBTs Optimized for 5-30kHz Switching Square RBSOA Avalanche Capability Short Circuit Capability International Standard Packages Advantages High Power Density 175°C Rated Extremely Rugged Low Gate Drive Requirement Easy to Parallel Appl |
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IXYS |
Power MOSFETs q International standard packages q JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification q miniBLOC with Aluminium nitride isolation q Low R HDMOSTM process DS (on) q Rugged polysilicon gate cell structure q Unclamped Inductive Switchin |
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IXYS |
IGBT Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability International Standard Packages Advantages High Power Density Extremely Rugged Low Gate Drive Requirement Applications Power Inverters UPS M |
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IXYS Corporation |
HiPerFAST IGBT - Surface Mountable l International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD l High frequency IGBT l High current handling capability l 2nd generation HDMOSTM process l MOS Gate turn-on - drive simplicity Applications l AC motor speed con |
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IXYS |
IGBT l International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD l High frequency IGBT l High current handling capability l 2nd generation HDMOSTM process l MOS Gate turn-on - drive simplicity Applications l AC motor speed con |
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IXYS |
Power MOSFET |
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IXYS Corporation |
HiPerFET Power MOSFETs International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated |
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IXYS Corporation |
Power MOSFET • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density © 2008 IXYS CORPORATION, All rights reserved DS991 |
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IXYS Corporation |
HiPerFAST IGBT - Surface Mountable l International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD l High frequency IGBT l High current handling capability l 2nd generation HDMOSTM process l MOS Gate turn-on - drive simplicity Applications l AC motor speed con |
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IXYS Corporation |
(IXGx50N60B2) HiPerFASTTM IGBT B2-Class High Speed IGBTs z z Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (TO-247) 1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g z High frequency IGBT High current handling capability MOS Gate turn-on - drive simplici |
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IXYS Corporation |
(IXGN50N60BD2 / IXGN50N60BD3) HiPerFAST IGBT • International standard package miniBLOC • Aluminium nitride isolation - high power dissipation • Isolation voltage 3000 V~ • Very high current, fast switching IGBT & FRED diode • MOS Gate turn-on - drive simplicity • Low collector-to-case capacitan |
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IXYS Corporation |
(IXGN50N60BD2 / IXGN50N60BD3) HiPerFAST IGBT • International standard package miniBLOC • Aluminium nitride isolation - high power dissipation • Isolation voltage 3000 V~ • Very high current, fast switching IGBT & FRED diode • MOS Gate turn-on - drive simplicity • Low collector-to-case capacitan |
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IXYS Corporation |
IXFN150N10 International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated |
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Desde 2024. D4U Semiconductor.
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