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IXFN150N10 |
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| Part Number | IXFN150N10 |
| Manufacturer | IXYS Corporation |
| Description | HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFK100N10 IXFN150N10 ID25 RDS(on) 12 mW 12 mW 100 V 100 A 100 V 150 A trr £ 200 ns TO-264 AA (IXFK) ... |
| Features |
International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier
q q q q q q q q
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2 4 ±200 TJ = 25°C TJ = 125°C 400 2 12 V V nA mA mA mW
VDSS VGH(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 8 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 • VDSS VGS = 0 ... |
| Document |
 IXFN150N10 Data Sheet
PDF 115.93KB |
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Desde 2024. D4U Semiconductor.
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