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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤130mΩ.(VGS = -10 V) ·Enhancement mode: Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switc |
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Desde 2024. D4U Semiconductor.
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