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INCHANGE |
N-Channel MOSFET OL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250uA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 250uA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 27.5A IGSS Gate Source Leakage Current VGS= ±20V;VDS= |
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INCHANGE |
N-Channel MOSFET ·Typical RDS(on)=1.56Ω ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Ideal for off-line powersupplies adaptors and PFC ·Ligh |
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INCHANGE |
Schottky Rectifier ·Plastic material used carriers Underwriter Laboratory ·Metal silicon junction, majority carrier conduction ·Low Power Loss,high Efficiency ·Guard ring for overvoltage protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot vari |
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INCHANGE |
Schottky Barrier Rectifier ·With TO-220 packaging ·High junction temperature capability ·Low forward voltage drop ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switch |
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INCHANGE |
N-Channel MOSFET ·Excellent switching performance ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching application ·ABSOLUTE MAXIMUM RATI |
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INCHANGE |
N-Channel MOSFET ·Typical RDS(on)=0.4Ω ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching application ·ABSOLUTE MAXIMU |
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INCHANGE |
N-Channel MOSFET ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Solenold and relay dirvers ·DC-DC converters ·Automotive environment ·ABSOLUT |
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INCHANGE |
N-Channel MOSFET ·Low input capacitance and gate charge ·Low gate input resistances ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor STP26NM60N ·A |
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INCHANGE |
Schottky Barrier Rectifier ·With TO-247 packaging ·High Junction Temperature Capability ·Low forward voltage, high current capability ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation |
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INCHANGE |
Schottky Barrier Rectifier ·High junction temperature capability ·Low Power Loss,high Efficiency ·Low forward voltage drop current ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·B |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 240mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 350mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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INCHANGE |
N-Channel MOSFET ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·S |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 175mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 190mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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INCHANGE |
Schottky Barrier Rectifier ·Very small conduction losses ·Negligible switching losses ·High Current Capability, Low Forward Voltage Drop ·High Surge Capacity ·Guarding for Overvoltage protection ·For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Pro |
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INCHANGE |
Schottky Barrier Rectifier ·Schottky Barrier Chip ·Dual Rectifier Conduction, Positive Center Tap ·Low Power Loss/High Efficiency ·High Current Capability, Low Forward Voltage Drop ·High Surge Capacity ·Guarding for Overvoltage protection ·Minimum Lot-to-Lot variations for rob |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Low Power Loss/High Efficiency ·High surge capability ·Low Stored Charge Majority Carrier Conduction ·Minimum Lot-to-Lot varia |
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INCHANGE |
N-Channel MOSFET ·Typical RDS(on)=0.25Ω ·Low input capacitance and gate charge ·Low gate input resistances ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semic |
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INCHANGE |
N-Channel MOSFET ·Typical RDS(on)=0.25Ω ·Low input capacitance and gate charge ·Low gate input resistances ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAX |
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Desde 2024. D4U Semiconductor.
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