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STP15NM65N |
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| Part Number | STP15NM65N |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP15NM65N ·FEATURES ·Typical RDS(on)=0.25Ω ·Low input capacitance and gate charge ·Low gate input resistances ·100% avalanche tested ·Minimum ... |
| Features |
·Typical RDS(on)=0.25Ω ·Low input capacitance and gate charge ·Low gate input resistances ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±25 15.5 10 62 PD Total Dissipation 150 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTI... |
| Document |
 STP15NM65N Data Sheet
PDF 200.98KB |
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