INCHANGE SK1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SK1346	Inchange Semiconductor	N-Channel MOSFET Transistor oltage Drain Current VDS=60V; VGS= 0 VSD Diode Forward Voltage IF=25A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=15A;RL=2Ω toff Turn-off time 2SK1346 MIN TYP MAX UNIT 60 V 1.5 3.5 V 0.04 0.06 Ω ±100 nA 300 u
2	2SK1941	Inchange Semiconductor	N-Channel MOSFET Transistor VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input capacitance Crss Reverse transfer capacitance Coss Output capacitance tr Rise time ton Turn-o
3	2SK1081	Inchange Semiconductor	N-Channel MOSFET Transistor te Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 3A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=800V; VGS= 0 VSD Forward On-Voltage IS=7A; VGS=0 tr
4	2SK1203	Inchange Semiconductor	N-Channel MOSFET Transistor 0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A IGSS Gate Source Leakage Current VGS= ±16V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0 VSD Diode Forward
5	2SK1020	Inchange Semiconductor	N-Channel MOSFET Transistor GS(th) Gate Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=15A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 VSD Forward On-Voltage IS=30A;
6	2SK1010	Inchange Semiconductor	N-Channel MOSFET Transistor e Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 3A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 VSD Forward On-Voltage IS=6A; VGS=0 tr
7	K1378	Inchange Semiconductor	2SK1378
8	2SK1913	Inchange Semiconductor	N-Channel MOSFET Transistor 250µA VGS(th) Gate Threshold Voltage VDS= 10V; ID=1mA VDF Body to drain diode forward voltage IF = 4 A, VGS = 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 2.5A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Dr
9	2SK1454	Inchange Semiconductor	N-Channel MOSFET Transistor ) Drain-Source On-stage Resistance VGS=10V; ID=15A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0 VSD Diode Forward Voltage IF=30A; VGS=0 tr Rise time ton Turn-on time tf Fall ti
10	2SK1450	Inchange Semiconductor	N-Channel MOSFET Transistor ) Drain-Source On-stage Resistance VGS=10V; ID=10A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0 VSD Diode Forward Voltage IF=20A; VGS=0 tr Rise time ton Turn-on time tf Fall ti
11	2SK1357	Inchange Semiconductor	N-Channel MOSFET Transistor 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=2A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0 VSD Diode Forward Volta
12	2SK1351	Inchange Semiconductor	N-Channel MOSFET Transistor rce Breakdown Voltage VGS=0; ID= 10mA 500 V VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA 1.5 3.5 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=2.5A 1.3 1.5 Ω IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 ±100 nA IDSS
13	2SK1330A	Inchange Semiconductor	N-Channel MOSFET Transistor Threshold Voltage VDS=25V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=5A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=640V; VGS= 0 ton Turn-on time toff Turn-off time VGS=10
14	2SK1222	Inchange Semiconductor	N-Channel MOSFET Transistor Gate Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 6A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 450V; VGS= 0 2SK1222 MIN TYP. MAX UNIT 450 V 2.
15	2SK1199	Inchange Semiconductor	N-Channel MOSFET Transistor =25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 5A IGSS Gate Source Leakage Current VGS= ±16V;
16	2SK1118	Inchange Semiconductor	N-Channel MOSFET Transistor Voltage VGS= 0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 VSD F
17	2SK1008	INCHANGE	N-Channel MOSFET old Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 2.5A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 VSD Forward On-Voltage IS=4.5A; VGS=0 tr Ris
18	2SK1976	Inchange Semiconductor	N-Channel MOSFET Transistor rrent VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0 100 µA Ciss Input capacitance 830 Crss Reverse transfer capacitance VDS=25V;VGS=0V;fT=1MHz 50 pF Coss Output capacitance 140 tr Rise time ton Turn
19	2SK1933	Inchange Semiconductor	N-Channel MOSFET Transistor diode forward voltage IF = 10 A, VGS = 0 2 3 V 0.9 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 5A 0.9 1.2 Ω IGSS Gate-Body Leakage Current VGS= ±25V;VDS= 0 ±10 µA IDSS Zero Gate Voltage Drain Current VDS= 720V; VGS= 0 250 µ
20	2SK1922	Inchange Semiconductor	N-Channel MOSFET Transistor pacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time ton Turn-on Time tf Fall Time toff Turn-off Time CONDITIONS VGS= 0; ID= 10mA VDS= 0; IG= 100mA VDS= 10V; ID=1mA VGS= 10V; ID= 1A VGS= ±30V;VDS= 0 VDS= 480V;