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| Part Number | 2SK1199 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SK1199 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters. |
| Features | =25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 5A IGSS Gate Source Leakage Current VGS= ±16V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0 VSD Diode Forward Voltage IF=2A; VGS=0 tr Rise time ton Turn-on time tf Fall . |
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Desde 2024. D4U Semiconductor.
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