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INCHANGE |
NPN Transistor kdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 5V ICBO Collector Cutoff Current VCB= 60V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC |
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INCHANGE |
NPN Transistor 240V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5mA; VCE= 10V hFE-2 DC Current Gain IC= 20mA; VCE= 10V fT Current-Gain—Bandwidth Product IC= 20mA; VCE= 20V COB Output Capacitance IE= 0; VCB= 20V, ftest |
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Inchange Semiconductor |
Silicon NPN Power Transistors tage IC= 500mA; VCE= 5V ICBO Collector Cutoff Current VCB= 160V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE DC Current Gain IC= 100mA ; VCE= 5V hFE Classifications O Y 70-140 120-240 KTC4370 MIN TYP. MAX UNIT 160 V 1.5 |
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Inchange Semiconductor |
Silicon NPN Power Transistors |
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Inchange Semiconductor |
Silicon NPN Power Transistors wn Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 |
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INCHANGE |
NPN Transistor PARAMETER CONDITIONS V(BR)CBO Collector-Base breakdown voltage IC=10uA ; IB=0 V(BR)CEO Collector-emitter breakdown voltage IC=1mA ; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=10uA ; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC=20 |
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Inchange Semiconductor |
Silicon NPN Power Transistors Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(on) Base-Emitter On Voltage IC= 500mA; VCE= 5V ICBO Collector Cutoff Current VCB= 160V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE DC C |
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Inchange Semiconductor |
Silicon NPN Power Transistors 1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= |
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Inchange Semiconductor |
Silicon NPN Power Transistors C= 1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB |
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Inchange Semiconductor |
Silicon NPN Power Transistors ollector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A ICBO Collector Cutoff Current VCB= 170V ; IE=0 IEBO Emitter Cutoff Current VEB= 5V ; IC=0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V |
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Inchange Semiconductor |
Silicon NPN Power Transistors MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 230 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A 3.0 V VBE(on) Base-Emitter On Voltage IC= 7A; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= |
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Inchange Semiconductor |
Silicon NPN Power Transistors |
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Inchange Semiconductor |
Silicon NPN Power Transistors oltage IC= 500mA; VCE= 5V ICBO Collector Cutoff Current VCB= 180V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE DC Current Gain IC= 100mA; VCE= 5V hFE Classifications O Y 70-140 120-240 KTC4370A MIN TYP. MAX UNIT 180 V 1.5 |
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INCHANGE |
NPN Transistor VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 2V ICBO Collector Cutoff Current VCB= 20V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A ; VCE |
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INCHANGE |
NPN Transistor ISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= |
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INCHANGE |
NPN Transistor ℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) |
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INCHANGE |
Silicon NPN Power Transistor Base-Emitter On Voltage IC= 0.5A ; VCE= 5V ICBO Collector Cutoff Current VCB= 60V ; IE= 0 IEBO Emitter Cutoff Current VEB= 7.0V; IC= 0 hFE DC current gain IC= 0.5A ; VCE= 5V hFE Classifications Y GR 100-200 150-300 KTC2020D MIN MA |
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Desde 2024. D4U Semiconductor.
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