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KTC3503 |
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| Part Number | KTC3503 |
| Manufacturer | INCHANGE |
| Description | ·Low Collector Saturation Voltage ·High breakdown voltage ·Silicon NPN epitaxial planar transistor ·Small reverse transfer capacitance and excellent high frequency characteristic ·Complement to KTA138... |
| Features |
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base breakdown voltage
IC=10uA ; IB=0
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10uA ; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC=20mA; IB= 2mA
VBE(sat) Base-Emitter Saturation Voltage
IC=20mA; IB= 2mA
ICBO
Collector Cutoff Current
VCB= 300V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 10mA ; VCE= 10V
fT
Current-Gain—Bandwidth Product
IE= -10mA; VCE= 10V
MIN TYP. MAX UNIT
300
V
300
V
5
V
0.6
V
1.0
V
1.0 μA
1.0 μA
60
200... |
| Document |
 KTC3503 Data Sheet
PDF 208.73KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KTC3502 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 2 | KTC3503 |
KEC |
TRIPLE DIFFUSED NPN TRANSISTOR |
|
| 3 | KTC3531T |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 4 | KTC3532T |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 5 | KTC3535T |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 6 | KTC3536T |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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