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NPN Transistor r Breakdown Voltage IC= 100mA; IB= 0 VCE(sat)-1* Collector-Emitter Saturation Voltage VCE(sat)-2* Collector-Emitter Saturation Voltage VCE(sat)-3* Collector-Emitter Saturation Voltage VBE(sat)* Base-Emitter Saturation Voltage VBE(on)* Base-Emit |
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PNP Transistor kdown Voltage IC= -30mA; IB= 0 VCE(sat)-1* Collector-Emitter Saturation Voltage VCE(sat)-2* Collector-Emitter Saturation Voltage VBE(on)* Base-Emitter On Voltage ICBO Collector Cutoff Current IC=- 4A; IB= -400mA IC=- 10A; IB= -3.3A IC= -4A; VC |
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PNP Transistor CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1* Collector-Emitter Saturation Voltage IC= -4A; IB= -16mA VCE(sat)-2* Collector-Emitter Saturation Voltage IC= -8A; IB= -80mA VBE(sat)* Base-Emitter Saturat |
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NPN Transistor trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor KSH122I ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA V |
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NPN Transistor 0mA; IB= 0 VCE(sat)* VBE(on)* ICBO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC= 6A; IB= 600mA IC= 6A; VCE=4V VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE1* hFE2* DC Current Gain |
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NPN Transistor tter Saturation Voltage IC= 2A; IB= 8mA VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA VBE(sat)* Base-Emitter Saturation Voltage IC= 4A; IB= 40mA VBE(on)* Base-Emitter On Voltage IC= 2A; VCE= 3V V(BR)CEO Collector-Emitter Bre |
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NPN Transistor A; IB= 0 VCE(sat)* VBE(on)* ICBO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC= 3A; IB= 375mA IC= 3A; VCE=4V VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE1* hFE2* DC Current Gain DC |
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PNP Transistor d SYMBOL PARAMETER CONDITIONS VCE(sat)-1* Collector-Emitter Saturation Voltage IC= -2A; IB=- 8mA VCE(sat)-2* Collector-Emitter Saturation Voltage IC= -4A; IB=- 40mA VBE(sat)* Base-Emitter Saturation Voltage IC=- 4A; IB=- 40mA VBE(on)* Base-Em |
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PNP Transistor S MIN TYP MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -25 V VCE(sat)-1* Collector-Emitter Saturation Voltage VCE(sat)-2* Collector-Emitter Saturation Voltage VCE(sat)-3* Collector-Emitter Saturation Voltage VBE(sat |
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NPN Transistor off Current VCB= 300V; IE= 0 IEBO Emitter Cutoff Current VEB=3V; IC= 0 hFE1* DC Current Gain *:Pulse test PW≤300us,duty cycle≤2% IC= 50mA; VCE= 10V KSH340 MIN TYP MAX UNIT 300 V 100 uA 100 uA 30 240 isc website：www.iscsemi.com 2 |
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PNP Transistor PARAMETER CONDITIONS V(BR)CEO * Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) VBE(sat) ICEO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IC=-8A; IB= -400mA IC=-8A; IB= -800mA VCE=- |
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NPN Transistor specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)-1* Collector-Emitter Saturation Voltage VCE(sat)-2* Collector-Emitter Saturation Voltage VBE(on)* Base-Emitter On Voltage ICBO Coll |
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NPN Transistor TIONS V(BR)CEO * Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)* VBE(on)* ICEO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC=1A; IB= 200mA IC= 1A; VCE=10V VCE= 300V; IE= 0 IEBO Emitter Cu |
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PNP Transistor Collector Cutoff Current VCB= -300V; IE= 0 IEBO Emitter Cutoff Current VEB=-3V; IC= 0 hFE1* DC Current Gain *:Pulse test PW≤300us,duty cycle≤2% IC=- 50mA; VCE= -10V MIN TYP MAX UNIT -300 V -100 uA -100 uA 30 240 isc website：www.isc |
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NPN Transistor (sat) VBE(sat) ICEO Collector-Emitter Saturation Voltage IC=8A; IB= 400mA Base-Emitter Saturation Voltage IC=8A; IB= 800mA Collector Cutoff Current VCE= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE1 DC Current Gain hFE2 DC Cu |
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NPN Transistor TER CONDITIONS V(BR)CEO * Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) VBE(sat) ICEO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IC=8A; IB= 400mA IC=8A; IB= 800mA VCE= 80V; IE= 0 |
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PNP Transistor mA; IB= 0 VCE(sat)-1* Collector-Emitter Saturation Voltage VBE(on)* Base-Emitter On Voltage ICBO Collector Cutoff Current IC=- 3A; IB= -375mA IC= -3A; VCE=-4V VCB=- 100V; IE= 0 IEBO Emitter Cutoff Current VEB=- 5V; IC= 0 hFE1* hFE2* DC Cur |
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PNP Transistor C= -30mA; IB= 0 VCE(sat)* VBE(on)* ICBO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC=- 6A; IB=- 600mA IC=- 6A; VCE=-4V VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB=- 5V; IC= 0 hFE1* hFE2* DC Cu |
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NPN Transistor TIONS V(BR)CEO * Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)* VBE(on)* ICEO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC=1A; IB= 200mA IC= 1A; VCE=10V VCE= 150V; IE= 0 IEBO Emitter Cu |
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NPN Transistor CTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA VBE(sat)* Base-Emitter Saturation Volta |
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Desde 2024. D4U Semiconductor.
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