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KSH112 |
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| Part Number | KSH112 |
| Manufacturer | INCHANGE |
| Description | ·High DC current gain ·Built-in a damper diode at E-C ·Electrically similar to popular TIP112 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation... |
| Features |
tter Saturation Voltage IC= 2A; IB= 8mA
VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA
VBE(sat)* Base-Emitter Saturation Voltage
IC= 4A; IB= 40mA
VBE(on)* Base-Emitter On Voltage
IC= 2A; VCE= 3V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1*
DC Current Gain
IC= 0.5A; VCE= 3V
hFE-2*
DC Current Gain
IC= 2A; VCE= 3V
hFE-3*
DC Current Gain
IC= 4A; VCE=3V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product
*:Pulse... |
| Document |
 KSH112 Data Sheet
PDF 252.38KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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